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  d a t a sh eet product speci?cation supersedes data of 1999 december 23 file under integrated circuits, ic17 2000 nov 22 integrated circuits cgy2105ats high dynamic range dual lna mmic
2000 nov 22 2 philips semiconductors product speci?cation high dynamic range dual lna mmic cgy2105ats features dual low noise amplifier (lna) monolithic microwave integrated circuit (mmic) typical noise figure of 0.57 db typical gain of 16.3 db at 1810 mhz input ip3 of 13.5 dbm at 1810 mhz low current of 58 ma at 2.5 v for each channel low cost ssop16 plastic package. applications dcs1800 pcs1900. general description the cgy2105 is a dual gallium arsenide (gaas) mmic amplifier designed for use in very low noise figure applications, where high linearity is also required. excellent tracking between the two amplifiers is obtained. gain and noise figure variations with temperature are very small. the device is suitable for use in dcs1800 and pcs1900 base station applications. it also provides high gain and very low noise performance at frequencies between 1.0 and 2.5 ghz, as used in wireless local area network (wlan) applications. a redesign of the application board might be necessary for optimum performance. ordering information block diagram type number package name description version cgy2105ats ssop16 plastic shrink small outline package; 16 leads; body width 4.4 mm sot369-1 handbook, full pagewidth fca096 16 13 12 9 v s2 v s1 v g2 v g1 cgy2105ats 1, 2, 14, 15 7, 8, 10, 11 3 6 4, 5 in2 in1 n.c. out2 out1 fig.1 block diagram.
2000 nov 22 3 philips semiconductors product speci?cation high dynamic range dual lna mmic cgy2105ats pinning symbol pin description v s2 1, 2, 14 and 15 ampli?er 2 source in2 3 ampli?er 2 input n.c. 4 not connected n.c. 5 not connected in1 6 ampli?er 1 input v s1 7, 8, 10 and 11 ampli?er 1 source out1 9 ampli?er 1 drain output v g1 12 ampli?er 1 gate bias v g2 13 ampli?er 2 gate bias out2 16 ampli?er 2 drain output handbook, halfpage cgy2105ats fca097 1 2 3 4 5 6 7 8 v s2 v s2 in2 n.c. n.c. in1 v s1 v s1 out2 v s2 v s2 v g2 v g1 v s1 v s1 out1 16 15 14 13 12 11 10 9 fig.2 pin configuration. limiting values thermal characteristics symbol parameter conditions min. max. unit v ds drain-source voltage source connected to ground and gate open-circuit - 5v v gs gate-source voltage source connected to ground and drain open-circuit - 3+1v v dg drain-gate voltage gate connected to ground and source open-circuit - 7v v supply positive supply voltage see chapter application and test information - 6v v neg negative supply voltage see chapter application and test information - 6 - v t amb ambient temperature - 40 +85 c t j junction temperature - 150 c t stg storage temperature - 150 c p tot total power dissipation t amb <85 c - 430 mw symbol parameter value unit r th(j-a) thermal resistance from junction to ambient 150 k/w
2000 nov 22 4 philips semiconductors product speci?cation high dynamic range dual lna mmic cgy2105ats characteristics t amb =25 c; measured and guaranteed only for the application shown in chapter application and test information; unless otherwise speci?ed. symbol parameter conditions min. typ. max. unit supplies i supply positive supply current (for each lna) v supply = 5.0 v; v neg = - 5.0 v 42 56 72 ma i neg negative supply current (for each lna) v supply = 5.0 v; v neg = - 5.0 v - 0.3 0.4 ma ampli?ers: v supply = 5.0 v; v neg = - 5.0 v; z 0 =50 w ; both lnas biased; duty cycle 100% f i input frequency 1710 - 1910 mhz g gain f i = 1710 mhz 15.8 16.7 17.6 db f i = 1710 to 1910 mhz 14.6 16.1 17.6 db d g (t) gain variation with temperature - 40 c 2000 nov 22 5 philips semiconductors product speci?cation high dynamic range dual lna mmic cgy2105ats application and test information handbook, full pagewidth fca098 cgy2105ats 14 13 12 11 10 9 16 15 4, 5 7 68 123 n.c. in2 in1 out2 out1 v neg v supply c6 c5 c2 c1 r2 r4 r3 r6 r5 r1 l2 trl6 trl4 trl2 trl5 trl1 trl3 l1 c4 c3 c8 c7 fig.3 application diagram. the demonstration board has been optimized for a centre frequency of 1.8 ghz. the mmic s-parameters (typical values) in a range from 0.1 to 6 ghz are available on request.
2000 nov 22 6 philips semiconductors product speci?cation high dynamic range dual lna mmic cgy2105ats handbook, full pagewidth r2 out2 out1 in2 in1 fca099 v neg v supply v supply trl6 trl4 trl5 trl3 trl2 trl1 c2 c4 c6 c5 c8 c7 c1 c3 r1 l2 l1 r4 r6 r5 r3 fig.4 application pcb layout. designed for a centre frequency of 1.8 ghz.
2000 nov 22 7 philips semiconductors product speci?cation high dynamic range dual lna mmic cgy2105ats table 1 list of components; see figs 3 and 4 table 2 transmission lines; see figs 3 and 4 note 1. transmission line lengths and widths in mm are valid for a double sided pcb; thickness of 0.8 mm in fr4 material ( e = 4.7). component description value reference c1, c2 decoupling capacitor 1 nf philips; npo, 0603 c3, c4 decoupling capacitor 47 pf philips; npo, 0603 c5, c6 decoupling capacitor 47 pf philips; npo, 0603 c7, c8 decoupling capacitor 0.56 pf philips; npo, 0603 r1, r2 drain biasing resistor 39 w philips; xr7, 0805 r3, r4 gate biasing resistor 15 k w philips; 0603 r5, r6 gate biasing resistor 10 k w philips; 0603 l1, l2 drain biasing inductor 18 nh coilcraft; 0603 component z 0 length in l length in mm (1) width in mm (1) trl1, trl2 100 w 0.101 l at 1800 mhz 10 mm 0.25 mm trl3, trl4 100 w 0.040 l at 1800 mhz 4 mm 0.80 mm trl5, trl6 100 w 0.034 l at 1800 mhz 3.4 mm 0.80 mm
2000 nov 22 8 philips semiconductors product speci?cation high dynamic range dual lna mmic cgy2105ats measured performance handbook, halfpage fca103 20.0 12.0 16.0 8.0 4.0 0.0 1.00 g 1.50 f (ghz) 2.00 2.50 fig.5 gain as a function of the frequency. v supply = 5 v; v neg = - 5v. handbook, halfpage fca101 2.00 1.60 1.20 0.80 0.40 0.00 1.50 1.60 1.70 1.80 f (ghz) nf (db) 1.90 2.00 fig.6 noise figure as a function of the frequency. v supply = 5 v; v neg = - 5v. handbook, halfpage fca102 0.0 - 2.5 - 5.0 - 7.5 - 10.0 1.00 1.50 f (ghz) s 11 (db) 2.00 2.50 fig.7 input reflection coefficient ? s 11 ? as a function of the frequency. v supply = 5 v; v neg = - 5v. handbook, halfpage fca104 0.0 - 10.0 - 5.0 - 15.0 - 20.0 - 25.0 1.00 1.50 f (ghz) s 12 (db) 2.00 2.50 fig.8 reverse transmission coefficient ? s 12 ? as a function of the frequency. v supply = 5 v; v neg = - 5v.
2000 nov 22 9 philips semiconductors product speci?cation high dynamic range dual lna mmic cgy2105ats handbook, halfpage fca105 0.0 - 10.0 - 5.0 - 15.0 - 20.0 - 25.0 1.00 1.50 f (ghz) s 22 (db) 2.00 2.50 fig.9 output reflection coefficient ? s 22 ? as a function of the frequency. v supply = 5 v; v neg = - 5v. handbook, halfpage fca106 0.0 - 10.0 - 20.0 - 30.0 1.00 1.50 f (ghz) iso i (db) 2.00 2.50 fig.10 isolation between rf inputs as a function of the frequency. v supply = 5 v; v neg = - 5v. handbook, halfpage fca107 20.0 10.0 0.0 - 10.0 - 20.0 - 10.0 p i (dbm) p o (dbm) 10.0 0.0 fig.11 rf output power as a function of the rf input power. v supply = 5 v; v neg = - 5v.
2000 nov 22 10 philips semiconductors product speci?cation high dynamic range dual lna mmic cgy2105ats package outline unit a 1 a 2 a 3 b p cd (1) e (1) (1) eh e ll p qz y w v q references outline version european projection issue date iec jedec eiaj mm 0.15 0.00 1.4 1.2 0.32 0.20 0.25 0.13 5.30 5.10 4.5 4.3 0.65 6.6 6.2 0.65 0.45 0.48 0.18 10 0 o o 0.13 0.2 0.1 dimensions (mm are the original dimensions) note 1. plastic or metal protrusions of 0.20 mm maximum per side are not included. 0.75 0.45 1.0 sot369-1 mo-152 95-02-04 99-12-27 w m q a a 1 a 2 b p d y h e l p q detail x e z e c l v m a x (a ) 3 a 0.25 18 16 9 pin 1 index 0 2.5 5 mm scale ssop16: plastic shrink small outline package; 16 leads; body width 4.4 mm sot369-1 a max. 1.5
2000 nov 22 11 philips semiconductors product speci?cation high dynamic range dual lna mmic cgy2105ats soldering introduction to soldering surface mount packages this text gives a very brief insight to a complex technology. a more in-depth account of soldering ics can be found in our data handbook ic26; integrated circuit packages (document order number 9398 652 90011). there is no soldering method that is ideal for all surface mount ic packages. wave soldering can still be used for certain surface mount ics, but it is not suitable for fine pitch smds. in these situations reflow soldering is recommended. re?ow soldering reflow soldering requires solder paste (a suspension of fine solder particles, flux and binding agent) to be applied to the printed-circuit board by screen printing, stencilling or pressure-syringe dispensing before package placement. several methods exist for reflowing; for example, convection or convection/infrared heating in a conveyor type oven. throughput times (preheating, soldering and cooling) vary between 100 and 200 seconds depending on heating method. typical reflow peak temperatures range from 215 to 250 c. the top-surface temperature of the packages should preferable be kept below 220 c for thick/large packages, and below 235 c for small/thin packages. wave soldering conventional single wave soldering is not recommended for surface mount devices (smds) or printed-circuit boards with a high component density, as solder bridging and non-wetting can present major problems. to overcome these problems the double-wave soldering method was specifically developed. if wave soldering is used the following conditions must be observed for optimal results: use a double-wave soldering method comprising a turbulent wave with high upward pressure followed by a smooth laminar wave. for packages with leads on two sides and a pitch (e): C larger than or equal to 1.27 mm, the footprint longitudinal axis is preferred to be parallel to the transport direction of the printed-circuit board; C smaller than 1.27 mm, the footprint longitudinal axis must be parallel to the transport direction of the printed-circuit board. the footprint must incorporate solder thieves at the downstream end. for packages with leads on four sides, the footprint must be placed at a 45 angle to the transport direction of the printed-circuit board. the footprint must incorporate solder thieves downstream and at the side corners. during placement and before soldering, the package must be fixed with a droplet of adhesive. the adhesive can be applied by screen printing, pin transfer or syringe dispensing. the package can be soldered after the adhesive is cured. typical dwell time is 4 seconds at 250 c. a mildly-activated flux will eliminate the need for removal of corrosive residues in most applications. manual soldering fix the component by first soldering two diagonally-opposite end leads. use a low voltage (24 v or less) soldering iron applied to the flat part of the lead. contact time must be limited to 10 seconds at up to 300 c. when using a dedicated tool, all other leads can be soldered in one operation within 2 to 5 seconds between 270 and 320 c.
2000 nov 22 12 philips semiconductors product speci?cation high dynamic range dual lna mmic cgy2105ats suitability of surface mount ic packages for wave and re?ow soldering methods notes 1. all surface mount (smd) packages are moisture sensitive. depending upon the moisture content, the maximum temperature (with respect to time) and body size of the package, there is a risk that internal or external package cracks may occur due to vaporization of the moisture in them (the so called popcorn effect). for details, refer to the drypack information in the data handbook ic26; integrated circuit packages; section: packing methods . 2. these packages are not suitable for wave soldering as a solder joint between the printed-circuit board and heatsink (at bottom version) can not be achieved, and as solder may stick to the heatsink (on top version). 3. if wave soldering is considered, then the package must be placed at a 45 angle to the solder wave direction. the package footprint must incorporate solder thieves downstream and at the side corners. 4. wave soldering is only suitable for lqfp, tqfp and qfp packages with a pitch (e) equal to or larger than 0.8 mm; it is definitely not suitable for packages with a pitch (e) equal to or smaller than 0.65 mm. 5. wave soldering is only suitable for ssop and tssop packages with a pitch (e) equal to or larger than 0.65 mm; it is definitely not suitable for packages with a pitch (e) equal to or smaller than 0.5 mm. package soldering method wave reflow (1) bga, lfbga, sqfp, tfbga not suitable suitable hbcc, hlqfp, hsqfp, hsop, htqfp, htssop, sms not suitable (2) suitable plcc (3) , so, soj suitable suitable lqfp, qfp, tqfp not recommended (3)(4) suitable ssop, tssop, vso not recommended (5) suitable
2000 nov 22 13 philips semiconductors product speci?cation high dynamic range dual lna mmic cgy2105ats data sheet status note 1. please consult the most recently issued data sheet before initiating or completing a design. data sheet status product status definitions (1) objective speci?cation development this data sheet contains the design target or goal speci?cations for product development. speci?cation may change in any manner without notice. preliminary speci?cation quali?cation this data sheet contains preliminary data, and supplementary data will be published at a later date. philips semiconductors reserves the right to make changes at any time without notice in order to improve design and supply the best possible product. product speci?cation production this data sheet contains ?nal speci?cations. philips semiconductors reserves the right to make changes at any time without notice in order to improve design and supply the best possible product. definitions short-form specification ? the data in a short-form specification is extracted from a full data sheet with the same type number and title. for detailed information see the relevant data sheet or data handbook. limiting values definition ? limiting values given are in accordance with the absolute maximum rating system (iec 60134). stress above one or more of the limiting values may cause permanent damage to the device. these are stress ratings only and operation of the device at these or at any other conditions above those given in the characteristics sections of the specification is not implied. exposure to limiting values for extended periods may affect device reliability. application information ? applications that are described herein for any of these products are for illustrative purposes only. philips semiconductors make no representation or warranty that such applications will be suitable for the specified use without further testing or modification. disclaimers life support applications ? these products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. philips semiconductors customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify philips semiconductors for any damages resulting from such application. right to make changes ? philips semiconductors reserves the right to make changes, without notice, in the products, including circuits, standard cells, and/or software, described or contained herein in order to improve design and/or performance. philips semiconductors assumes no responsibility or liability for the use of any of these products, conveys no licence or title under any patent, copyright, or mask work right to these products, and makes no representations or warranties that these products are free from patent, copyright, or mask work right infringement, unless otherwise specified.
2000 nov 22 14 philips semiconductors product speci?cation high dynamic range dual lna mmic cgy2105ats notes
2000 nov 22 15 philips semiconductors product speci?cation high dynamic range dual lna mmic cgy2105ats notes
? philips electronics n.v. sca all rights are reserved. reproduction in whole or in part is prohibited without the prior written consent of the copyright owne r. the information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. no liability will be accepted by the publisher for any consequence of its use. publication thereof does not con vey nor imply any license under patent- or other industrial or intellectual property rights. internet: http://www.semiconductors.philips.com 2000 70 philips semiconductors C a worldwide company for all other countries apply to: philips semiconductors, marketing communications, building be-p, p.o. box 218, 5600 md eindhoven, the netherlands, fax. +31 40 27 24825 argentina: see south america australia: 3 figtree drive, homebush, nsw 2140, tel. +61 2 9704 8141, fax. +61 2 9704 8139 austria: computerstr. 6, a-1101 wien, p.o. box 213, tel. +43 1 60 101 1248, fax. +43 1 60 101 1210 belarus: hotel minsk business center, bld. 3, r. 1211, volodarski str. 6, 220050 minsk, tel. +375 172 20 0733, fax. +375 172 20 0773 belgium: see the netherlands brazil: see south america bulgaria: philips bulgaria ltd., energoproject, 15th floor, 51 james bourchier blvd., 1407 sofia, tel. +359 2 68 9211, fax. +359 2 68 9102 canada: philips semiconductors/components, tel. +1 800 234 7381, fax. +1 800 943 0087 china/hong kong: 501 hong kong industrial technology centre, 72 tat chee avenue, kowloon tong, hong kong, tel. +852 2319 7888, fax. +852 2319 7700 colombia: see south america czech republic: see austria denmark: sydhavnsgade 23, 1780 copenhagen v, tel. +45 33 29 3333, fax. +45 33 29 3905 finland: sinikalliontie 3, fin-02630 espoo, tel. +358 9 615 800, fax. +358 9 6158 0920 france: 51 rue carnot, bp317, 92156 suresnes cedex, tel. +33 1 4099 6161, fax. +33 1 4099 6427 germany: hammerbrookstra?e 69, d-20097 hamburg, tel. +49 40 2353 60, fax. +49 40 2353 6300 hungary: see austria india: philips india ltd, band box building, 2nd floor, 254-d, dr. annie besant road, worli, mumbai 400 025, tel. +91 22 493 8541, fax. +91 22 493 0966 indonesia: pt philips development corporation, semiconductors division, gedung philips, jl. buncit raya kav.99-100, jakarta 12510, tel. +62 21 794 0040 ext. 2501, fax. +62 21 794 0080 ireland: newstead, clonskeagh, dublin 14, tel. +353 1 7640 000, fax. +353 1 7640 200 israel: rapac electronics, 7 kehilat saloniki st, po box 18053, tel aviv 61180, tel. +972 3 645 0444, fax. +972 3 649 1007 italy: philips semiconductors, via casati, 23 - 20052 monza (mi), tel. +39 039 203 6838, fax +39 039 203 6800 japan: philips bldg 13-37, kohnan 2-chome, minato-ku, tokyo 108-8507, tel. +81 3 3740 5130, fax. +81 3 3740 5057 korea: philips house, 260-199 itaewon-dong, yongsan-ku, seoul, tel. +82 2 709 1412, fax. +82 2 709 1415 malaysia: no. 76 jalan universiti, 46200 petaling jaya, selangor, tel. +60 3 750 5214, fax. +60 3 757 4880 mexico: 5900 gateway east, suite 200, el paso, texas 79905, tel. +9-5 800 234 7381, fax +9-5 800 943 0087 middle east: see italy netherlands: postbus 90050, 5600 pb eindhoven, bldg. vb, tel. +31 40 27 82785, fax. +31 40 27 88399 new zealand: 2 wagener place, c.p.o. box 1041, auckland, tel. +64 9 849 4160, fax. +64 9 849 7811 norway: box 1, manglerud 0612, oslo, tel. +47 22 74 8000, fax. +47 22 74 8341 pakistan: see singapore philippines: philips semiconductors philippines inc., 106 valero st. salcedo village, p.o. box 2108 mcc, makati, metro manila, tel. +63 2 816 6380, fax. +63 2 817 3474 poland : al.jerozolimskie 195 b, 02-222 warsaw, tel. +48 22 5710 000, fax. +48 22 5710 001 portugal: see spain romania: see italy russia: philips russia, ul. usatcheva 35a, 119048 moscow, tel. +7 095 755 6918, fax. +7 095 755 6919 singapore: lorong 1, toa payoh, singapore 319762, tel. +65 350 2538, fax. +65 251 6500 slovakia: see austria slovenia: see italy south africa: s.a. philips pty ltd., 195-215 main road martindale, 2092 johannesburg, p.o. box 58088 newville 2114, tel. +27 11 471 5401, fax. +27 11 471 5398 south america: al. vicente pinzon, 173, 6th floor, 04547-130 s?o paulo, sp, brazil, tel. +55 11 821 2333, fax. +55 11 821 2382 spain: balmes 22, 08007 barcelona, tel. +34 93 301 6312, fax. +34 93 301 4107 sweden: kottbygatan 7, akalla, s-16485 stockholm, tel. +46 8 5985 2000, fax. +46 8 5985 2745 switzerland: allmendstrasse 140, ch-8027 zrich, tel. +41 1 488 2741 fax. +41 1 488 3263 taiwan: philips semiconductors, 5f, no. 96, chien kuo n. rd., sec. 1, taipei, taiwan tel. +886 2 2134 2451, fax. +886 2 2134 2874 thailand: philips electronics (thailand) ltd., 60/14 moo 11, bangna trad road km. 3, bagna, bangkok 10260, tel. +66 2 361 7910, fax. +66 2 398 3447 turkey: yukari dudullu, org. san. blg., 2.cad. nr. 28 81260 umraniye, istanbul, tel. +90 216 522 1500, fax. +90 216 522 1813 ukraine : philips ukraine, 4 patrice lumumba str., building b, floor 7, 252042 kiev, tel. +380 44 264 2776, fax. +380 44 268 0461 united kingdom: philips semiconductors ltd., 276 bath road, hayes, middlesex ub3 5bx, tel. +44 208 730 5000, fax. +44 208 754 8421 united states: 811 east arques avenue, sunnyvale, ca 94088-3409, tel. +1 800 234 7381, fax. +1 800 943 0087 uruguay: see south america vietnam: see singapore yugoslavia: philips, trg n. pasica 5/v, 11000 beograd, tel. +381 11 3341 299, fax.+381 11 3342 553 printed in the netherlands 403506/02/pp 16 date of release: 2000 nov 22 document order number: 9397 750 07666


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